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STK541UC60C-E 데이터시트(PDF) 1 Page - ON Semiconductor

부품명 STK541UC60C-E
상세설명  Inverter Power H-IC
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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O0913HK No.A2230-1/14
Semiconductor Components Industries, LLC, 2013
October, 2013
http://onsemi.com
STK5F4U3E2D-E
Overview
This “Inverter Power H-IC” is highly integrated device containing all High Voltage (HV) control from HV-DC to
3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag.
Internal Boost diodes are provided for high side gate boost drive.
Function
 Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
 All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers.
 A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies
 Built-in dead-time for shoot-thru protection
 Having open emitter output for low side IGBTs; individual shunt resistor per phase for OCP
 Externally accessible embedded thermistor for substrate temperature measurement
 Shutdown function ‘ITRIP’ to disable all operations of the 6 phase output stage by external input
Certification
 UL1557 (File number: E339285).
Specifications
Absolute Maximum Ratings at Ta = 25
C
Parameter
Symbol
Remarks
Ratings
Unit
Supply voltage
VCC
P to NU,NV,NW, surge < 500V *1
450
V
Collector-emitter voltage
VCE
P to U,V,W, U to NU, V toNV, or W to NW
600
V
Output current
Io
P , N , U,V,W terminal current.
±50
A
P , N , U,V,W terminal current. Tc=100
C
±25
Output peak current
Iop
P , N, U,V,W terminal current , PW=1ms.
±100
A
Pre-driver supply voltage
VD1,2,3,4
VB1-VS1,VB2-VS2,VB3-VS3,VDD-VSS *2
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3, terminal.
0.3 to VDD
V
FAULT terminal voltage
VFAULT
FAULT terminal.
0.3 to VDD
V
Maximum loss
Pd
IGBT per channel
62.5
W
Junction temperature
Tj
IGBT, FRD
150
C
Storage temperature
Tstg
40 to +125
C
Operating temperature
Tc
HIC case
20 to +100
C
Tightening torque
MT
A screw part at use M4 type screw *3
1.17
Nm
Withstand Voltage
Vis
50Hz sine wave AC 1 minute *4
2000
VRMS
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.
*2: Terminal voltage: VD1=VB1-VS1, VD2=VB2-VS2, VD3=VB3-VS3, VD4=VDD-VSS.
*3: Flatness of the heat-sink should be 0.25mm and below.
*4. Test conditions: AC 2500V, 1 second.
Ordering number : EN*A2230
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Thick-Film Hybrid IC
Inverter Power H-IC
for 3-phase Motor Drive
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of this data sheet.
Advance Information
This document contains information on a new product. Specifications and information
herein are subject to change without notice.


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