STK5MFU3C1A-E

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5

1.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device

functionality should not be assumed, damage may occur and reliability may be affected.

2.

Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for

Safe Operating parameters.

3.

This surge voltage developed by the switching operation due to the wiring inductance between VP2 and N terminal.

4.

VBS=VBU to U, VBV to V, VBW to W

5.

Test conditions : AC2500V, 1 s

Rating

Symbol

Conditions

Value

Unit

PFC Section

PFC

IGBT

Collector-emitter voltage

VCE

PFCL to HVGND

600

V

Repetitive peak collector current

ICP

Duty cycle 10%, pulse width 1ms

150

A

Collector current

IC

53

A

Tc = 100

C

26

A

Maximum power dissipation

PC

96

W

PFC

Diode

Diode reverse voltage

VRM

VP1 to PFCL

600

V

Repetitive peak forward current

IFP1

Duty cycle 10%, pulse width 1ms

90

A

Diode forward current

IF1

30

A

Tc = 100

C

18

A

Maximum power dissipation

PD1

65

W

Anti-

parallel

Diode

Repetitive peak forward current

IFP2

Duty cycle 10%, pulse width 1ms

11

A

Diode forward current

IF2

3

A

Maximum power dissipation

PD2

5

W

Maximum AC input voltage

VAC

Single-phase Full-rectified

264

V

Maximum output voltage

Vo

In the Application Circuit

(VAC = 200 V)

450

V

Input AC current (steady state)

Iin

33

Arms

Inverter Section

Supply voltage

VCC

VP2 to N surge < 500 V

(Note 3)

450

V

Collector-emitter voltage

VCE max

VP2 to U, V, W or U, V, W to N

600

V

Output current

Io

VP2, U, V, W, N terminal current

±30

A

VP2, U, V, W, N terminal current at

Tc=100

C

±15

A

Output peak current

Iop

VP, U, V, W, N terminal current, pulse

width 1ms

±60

A

Maximum power dissipation

Pd

IGBT per 1 channel

65

W

Gate driver section

Gate driver supply voltage

VBS

VBU to U, VBV to V, VBW to W, VDD

to GND (Note 4)

0.3 to +20.0

V

Input signal voltage

VIN

HINU, HINV, HINW, LINU, LINV,

LINW, PFCIN

0.3 to VDD

V

FAULT terminal voltage

VFAULT

FAULT terminal

0.3 to VDD

V

ITRIP terminal voltage

VITRIP

ITRIP terminal

0.3 to +10.0

V

PFCTRIP terminal voltage

VPTRIP

PTRIP terminal

1.5 to 2.0

V

Intelligent Power Module

Junction temperature

Tj

IGBT, FRD, Gate driver IC

150

C

Storage temperature

Tstg

40 to +125

C

Operating case temperature

Tc

IPM case temperature

20 to +100

C

Tightening torque

MT

Case mounting screws

1.17

Nm

Isolation voltage

Vis

50Hz sine wave AC 1 minute

(Note 5)

2000

Vrms