FDD6670AL datasheet(2/6 Pages) FAIRCHILD

부품명	FDD6670AL

상세설명	30V N-Channel PowerTrench MOSFET

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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FDD6670AL Rev C (W)

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

WDSS

Drain-Source Avalanche Energy

Single Pulse, VDD = 15 V, ID = 21A

370

mJ

IAR

Drain-Source Avalanche Current

21

A

Off Characteristics

BVDSS

Drain–Source Breakdown

Voltage

VGS = 0 V,

ID = 250 µA

30

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

24

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

10

µA

IGSS

Gate–Body Leakage

VGS = ±20 V,

VDS = 0 V

±100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 µA

1

1.8

3

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250 µA, Referenced to 25°C

–5

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 18 A

VGS = 4.5 V,

ID = 16.5 A

VGS = 10 V, ID = 18 A, TJ=125°C

4

5

6

5

6

10

m

Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

50

A

gFS

Forward Transconductance

VDS = 5 V,

ID = 18 A

88

S

Dynamic Characteristics

Ciss

Input Capacitance

3845

pF

Coss

Output Capacitance

930

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

368

pF

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

1.2

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

15

27

ns

tr

Turn–On Rise Time

13

23

ns

td(off)

Turn–Off Delay Time

62

99

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6 Ω

36

58

ns

Qg

Total Gate Charge

37

56

nC

Qgs

Gate–Source Charge

10

nC

Qgd

Gate–Drain Charge

VDS = 15V,

ID = 18 A,

VGS = 5 V

14

nC

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