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SI4816DY-T1-E3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI4816DY-T1-E3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 8 page Si4816DY Vishay Siliconix www.vishay.com 4 Document Number: 71121 S-41697—Rev. E, 20-Sep-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1 0.00 0.01 0.02 0.03 0.04 0.05 0 2 468 10 On-Resistance vs. Gate-to-Source Voltage VGS -- Gate-to-Source Voltage (V) ID =10 A 0.001 0 1 100 40 60 10 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) 20 80 --1.0 --0.8 --0.6 --0.4 --0.2 --0.0 0.2 0.4 0.6 --50 --25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150_C ID = 250 mA 40 10 1 2 1 0.1 0.01 10--4 10--3 10--2 10--1 1 10 600 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ -- Temperature (_C) Source-Drain Diode Forward Voltage Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD -- Source-to-Drain Voltage (V) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM -- TA =PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 100 TJ =25_C 0.01 |
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