SI5435DC-T1 datasheet(2/4 Pages) VISHAY

부품명	SI5435DC-T1

상세설명	P-Channel 30-V (D-S) MOSFET

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제조업체	VISHAY [Vishay Siliconix]

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Si5435DC

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71144

S-21251—Rev. B, 05-Aug-02

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = --250 mA

--1

V

Gate-Body Leakage

IGSS

VDS =0 V, VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =--24 V, VGS =0 V

--1

mA

Zero Gate Voltage Drain Current

IDSS

VDS =--24 V, VGS =0 V, TJ =85_C

--5

mA

On-State Drain Currenta

ID(on)

VDS --5 V, VGS =--10 V

--30

A

Drain Source On State Resistancea

rDS( )

VGS =--10 V, ID =--4.1 A

0.042

0.050

Ω

Drain-Source On-State Resistancea

rDS(on)

VGS =--4.5 V, ID =--3.1 A

0.070

0.080

Ω

Forward Transconductancea

gfs

VDS =--15 V, ID =--4.1 A

8

S

Diode Forward Voltagea

VSD

IS =--1.1 A, VGS =0 V

--0.8

--1.2

V

Dynamicb

Total Gate Charge

Qg

16

24

Gate-Source Charge

Qgs

VDS =--15 V, VGS =--10 V, ID =--4.1 A

3.6

nC

Gate-Drain Charge

Qgd

3.1

Turn-On Delay Time

td(on)

11

20

Rise Time

tr

VDD =--15 V,RL =15 Ω

5

10

Turn-Off Delay Time

td(off)

VDD = --15 V, RL = 15 Ω

ID ≅ --1 A, VGEN =--10 V, RG =6 Ω

40

80

ns

Fall Time

tf

20

40

Source-Drain Reverse Recovery Time

trr

IF = --1.1 A, di/dt = 100 A/ms

30

60

Notes

a.

Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0

123

456

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 10thru6V

TC =--55_C

125_C

4V

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

3V

5V

유사한 부품 번호 - SI5435DC-T1

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI5435BDC	94Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. A, 18-Oct-04
	SI5435BDC	203Kb / 4P	P-Channel 30-V (D-S) MOSFET Rev. B, 12-Dec-05
	SI5435BDC	212Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. B, 02-Feb-09
	SI5435BDC-T1-E3	94Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. A, 18-Oct-04
	SI5435BDC-T1-GE3	212Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. B, 02-Feb-09

More results

유사한 설명 - SI5435DC-T1

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

More results

SI5435DC-T1 데이터시트(PDF) 2 Page - Vishay Siliconix

SI5435DC-T1 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI5435DC-T1

유사한 설명 - SI5435DC-T1

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