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TPR175 데이터시트(PDF) 1 Page - Advanced Semiconductor |
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TPR175 데이터시트(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 20 mA 10 --- PG VSRW ηηηη C VCE = 50 V POUT = 175 W f = 1090 MHz 8.0 9.0 40 00:1 dB % NPN SILICON RF-MICROWAVE POWER TRANSISTOR TPR175 DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. FEATURES: • Common Base • Internal Matching Network • P G = 8.0 dB at 175 W/1090 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 12.5 A VCES 55 V VEBO 3.5 V PDISS 388 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθ JC 0.45 °C/W PACKAGE STYLE 1 = Collector 2 = Base 3 = Emitter |
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