©2014 Silicon Storage Technology, Inc.

DS-70005004G

10/14

6

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

SST12LP17E

Data Sheet

Table 4: RF Characteristics at 25°C

Symbol

Parameter

Min.

Typ

Max.

Unit

Frequency range

2412

2484

MHz

G

Small signal gain

27

28

dB

Gain variation over band (2412–2484 MHz)

±0.5

dB

Gain ripple over channel (20 MHz)

0.2

dB

2f, 3f, 4f, 5f

Harmonics at 23 dBm, without external filters

-40

dBc

EVM

EVM @ 18 dBm output with 802.11g OFDM 54 Mbps

signal

3%

EVM @ 17 dBm output with MCS7-40 MHz band-

width

2.5

%

Output Power to meet 802.11g OFDM 54 Mbps

spectrum mask

20.5

21.5

dBm

Output Power to meet 802.11b DSSS 1 Mbps

spectrum mask

21

22.5

dBm

T4.2 75004

Table 5: Characteristics at 25°C for Bluetooth Applications

Symbol

Parameter

Min.

Typ

Max.

Unit

Frequency range

2412

2484

MHz

G

Small signal gain (configured as shown in Figure 9

on page 10)

26

28

dB

resistor)

23

26

dB

ICC

DC current at 17 dBm CW (configured as shown in

Figure 9 on page 10)

100

mA

series resistor)

50

mA

Power

Meeting Bluetooth spectrum power density using 3

Mbps modulation (-20 dBm at 1.5 MHz and -40 dBm

at 2.5 MHz, 100 kHz RBW)

(configured as shown in Figure 9 on page 10)

17

dBm

Meeting Bluetooth spectrum power density using 3

Mbps modulation (-20 dBm at 1.5 MHz and -40 dBm

at 2.5 MHz, 100 kHz RBW)

12

dBm

T5.2 75004