©2014 Silicon Storage Technology, Inc.

DS70005029C

07/15

2

2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

SST12LP15B

Data Sheet

Product Description

SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.

This power amplifier can be easily configured for both high-efficiency with low EVM for high data rate

applications and for high power-added efficiency (PAE) while operating over the 2.4- 2.5 GHz fre-

quency band. There are two application circuits provided to show this versatility.

Configured for high power-added efficiency, SST12LP15B provides more than 32 dB gain and typically

meets 3% EVM up to 23 dBm output power for 54 Mbps 802.11g operation. This power amplifier also

meets spectral mask compliance output power up to 25 dBm for 802.11g and up to 25.5 dBm for

802.11b operation. At 4.5V operation, the SST12LP15B-VQFN provides up to 24 dBm at 3% EVM.

Configured for high linearity, SST12LP15B provides more than 34 dB gain. It typically meets 2.5%

EVM up to 20 dBm using MCS7-HT40 modulation and meets 1.8% EVM up to 18 dBm using MCS9-

VHT40 modulation.

This device also features easy board-level usage along with high-speed power-up/down control

SST12LP15B controllable by an on/off switching signal directly from the baseband chip. These fea-

tures coupled with low operating current make SST12LP15B ideal for the final stage power amplifica-

tion in battery-powered 802.11b/g/n/256 QAM WLAN transmitter applications.

The power amplifier has an excellent, wide dynamic range (>20 dB), dB-wise linear on-chip power

detector. The excellent on-chip power detector provides a reliable solution to board-level power control.

The SST12LP15B is offered in both 16-contact VQFN (3mm x 3mm) and 12-contact XQFN (2mm x

2mm) packages. See Figures 3 and 4 for pin assignments and Tables 1 and 2 for pin descriptions.