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LM1865N 데이터시트(PDF) 2 Page - National Semiconductor (TI) |
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LM1865N 데이터시트(HTML) 2 Page - National Semiconductor (TI) |
2 / 16 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage Pin 17 16V Package Dissipation (Note 1) 20W Storage Temperature Range b 55 Cto a150 C Operating Temperature Range b 20 Cto a85 C Max Voltage on Pin 16 (Stop Output) 16V Soldering Information Dual-In-Line Package Soldering (10 seconds) 260 C Small Outline Package Vapor Phase (60 seconds) 215 C Infrared (15 seconds) 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering sur- face mount devices Electrical Characteristics Test Circuit TA e 25 C Va e12V S1 in position 2 S2 in position 1 and S3 in position 2 unless indicated otherwise Parameter Conditions Min Typ Max Units STATIC CHARACTERISTICS Supply Current 33 45 mA Pin 9 Regulator Voltage 57 V Operating Voltage Range (See Note 2) 73 16 V Pin 18 Output Leakage Current Pin 20 Open VIF e 0 S3 in Position 1 01 m A Pin 16 Stop Low Output Voltage S1 in Position 1 S2 in Position 3 03 V Pin 16 Stop High Output Leakage Current S2 in Position 2 V14 e V9 01 m A Pin 15 Audio Output Resistance 47 kX Pin 1 Buffer Input Resistance Measured at DC 350 X Pin 3 Buffer Output Resistance Measured at DC 350 X Pin 20 Wide Band Input Resistance Measured at DC 2 X Pin 8 Meter Output Resistance 1kX DYNAMIC CHARACTERISTICS fMOD e 400 Hz fo e 107 MHz Deviation e g75 kHz b 3 dB Limiting Sensitivity IF Only (See Note 3) 60 120 m Vrms Buffer Voltage Gain VIN Pin 1 e 10 mVrms at 107 MHz 19 22 25 dB Recovered Audio VIF e 10 mVrms V14 e V9 275 320 470 mVrms Signal-to-Noise VIF e 10 mVrms V14 e V9 (See Note 4) 70 84 dB AM Rejection V14 e V9 VIF e 1 mV 30% AM Mod 50 60 dB VIF e 10 mV 30% AM Mod 50 60 dB Minimum Total Harmonic Distortion VIF e 10 mV 01 035 % THD at Frequency where V14 e V9 VIF e 10 mV Tune until V14 e V9 01 045 % (Zero AFT Offset) THD g 10 kHz from Frequency where V14 e V9 VIF e 10 mV 015 % AFT Offset Frequency for Low VIF e 10 mV S2 in Position 3 fMOD e 0 g 50 kHz Stop Output at Pin 16 Offset e (Frequency for Pin 16 Low) b (Frequency where V14 e V9) Ultrasonic MuteStop Level Threshold V14 e V9 S1 in Position 3 (See Note 5) 60 kHz VIF e 10 mV fMOD e 100 kHz S2 in Position 3 Amount of Deviation where V16 x Low 2 |
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