MTB030N10RQ8-0-T3-G datasheet(2/9 Pages) CYSTEKEC

부품명	MTB030N10RQ8-0-T3-G

상세설명	N-Channel Enhancement Mode Power MOSFET

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제조업체	CYSTEKEC [Cystech Electonics Corp.]

홈페이지	http://www.cystekec.com

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2 / 9 page

CYStech Electronics Corp.

Spec. No. : C053Q8

Issued Date : 2016.11.04

Revised Date :

Page No. : 2/9

MTB030N10RQ8

CYStek Product Specification

Absolute Maximum Ratings (Tc=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current @ TA=25

°C, VGS=10V

6.2

Continuous Drain Current @ TA=70

°C, VGS=10V

ID

5.0

Pulsed Drain Current

IDM

25 *1

Avalanche Current @ L=0.1mH

IAS

25

A

Avalanche Energy @ L=2mH, ID=12A, VDD=25V

EAS

144 *3

Repetitive Avalanche Energy @ L=0.05mH

EAR

1.6 *2

mJ

TA=25

°C

3.1

Total Power Dissipation

TA=70

°C

PD

2

W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : *1

. Pulse width limited by maximum junction temperature

*2. Duty cycle ≤ 1%

*3. 100% tested by conditions of L=2mH, IAS=7A, VGS=10V, VDD=25V

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case

RθJC

20

Thermal Resistance, Junction-to-ambient (Note)

RθJA

40

°C/W

Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.

Characteristics (TC=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

100

-

VGS=0V, ID=250μA

VGS(th)

1

-

2.5

V

VDS = VGS, ID=250μA

GFS

-

12

-

S

VDS =10V, ID=5A

IGSS

-

±

100

nA

VGS=±20V

-

1

VDS =80V, VGS =0V

IDSS

-

25

μA

VDS =80V, VGS =0V, Tj=125

°C

-

22.7

30

VGS =10V, ID=10A

*RDS(ON)

-

27.5

37

mΩ

VGS =4.5V, ID=8A

Dynamic

Qg *1, 2

-

28

-

Qgs *1, 2

-

4.2

-

Qgd *1, 2

-

6.7

-

nC

VDS=80V, VGS=10V, ID=10A

Ciss

-

1378

-

Coss

-

120

-

Crss

-

19

-

pF

VDS=30V, VGS=0V, f=1MHz

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MTB030N10RQ8-0-T3-G 데이터시트(PDF) 2 Page - Cystech Electonics Corp.

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