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SI4447ADY 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI4447ADY
상세설명  P-Channel 40 V (D-S) MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
Vishay Siliconix
Si4447ADY
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 40
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 42
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
4.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.2
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
- 1
µA
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS  - 10 V, VGS = - 10 V
- 10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 5 A
0.036
0.045
VGS = - 4.5 V, ID = - 4 A
0.050
0.062
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 5 A
14
S
Dynamicb
Input Capacitance
Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
970
pF
Output Capacitance
Coss
120
Reverse Transfer Capacitance
Crss
95
Total Gate Charge
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
25
38
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
11.8
18
Gate-Source Charge
Qgs
3
Gate-Drain Charge
Qgd
5.2
Gate Resistance
Rg
f = 1 MHz
1.0
5.5
11
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 4 
ID  - 5 A, VGEN = - 10 V, Rg = 1 
714
ns
Rise Time
tr
12
24
Turn-Off DelayTime
td(off)
30
60
Fall Time
tf
918
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 4 
ID  - 5 A, VGEN = - 4.5 V, Rg = 1 
44
80
Rise Time
tr
33
60
Turn-Off DelayTime
td(off)
28
55
Fall Time
tf
13
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 3.5
A
Pulse Diode Forward Current
ISM
- 20
Body Diode Voltage
VSD
IS = - 2 A, VGS = 0 V
- 0.76
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
27
50
ns
Body Diode Reverse Recovery Charge
Qrr
19
35
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
13


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