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SI4447ADY 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4447ADY 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 67189 S10-2767-Rev. A, 29-Nov-10 Vishay Siliconix Si4447ADY New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 42 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 4.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V - 1 µA VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 10 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 5 A 0.036 0.045 VGS = - 4.5 V, ID = - 4 A 0.050 0.062 Forward Transconductancea gfs VDS = - 10 V, ID = - 5 A 14 S Dynamicb Input Capacitance Ciss VDS = - 20 V, VGS = 0 V, f = 1 MHz 970 pF Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 95 Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A 25 38 nC VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A 11.8 18 Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 5.2 Gate Resistance Rg f = 1 MHz 1.0 5.5 11 Turn-On Delay Time td(on) VDD = - 20 V, RL = 4 ID - 5 A, VGEN = - 10 V, Rg = 1 714 ns Rise Time tr 12 24 Turn-Off DelayTime td(off) 30 60 Fall Time tf 918 Turn-On Delay Time td(on) VDD = - 20 V, RL = 4 ID - 5 A, VGEN = - 4.5 V, Rg = 1 44 80 Rise Time tr 33 60 Turn-Off DelayTime td(off) 28 55 Fall Time tf 13 25 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 3.5 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 2 A, VGS = 0 V - 0.76 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 27 50 ns Body Diode Reverse Recovery Charge Qrr 19 35 nC Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 13 |
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