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TC2320 데이터시트(PDF) 1 Page - Supertex, Inc

부품명 TC2320
상세설명  N- and P-Channel Enhancement-Mode Dual MOSFET
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제조업체  SUTEX [Supertex, Inc]
홈페이지  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TC2320 데이터시트(HTML) 1 Page - Supertex, Inc

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1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
TC2320
Features
Low threshold
Low on-resistance
Low input capacitance
Fast switching speeds
Freedom from secondary breakdown
Low input and output leakage
Independent, electrically isolated N- and P-channels
Applications
Medical ultrasound transmitters
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interface
N- and P-Channel Enhancement-Mode Dual MOSFET
General Description
The Supertex TC2320 consists of a high voltage, low
threshold N- and P-channel MOSFET in an 8-Lead SOIC
package. This low threshold enhancement-mode (normally-
off) transistor utilizes an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
8-Lead SOIC (Narrow Body)
4.90x3.90mm body,
1.75mm height (max)
1.27mm pitch
BV
DSS/BVDGS
(V)
R
DS(ON)
(max)
(Ω)
N-Channel
P-Channel
N-Channel
P-Channel
TC2320
TC2320TG-G
200
-200
7.0
12
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Pin Configuration
Product Marking
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
YYWW
C2320
L L L L
8-Lead SOIC (TG)
GP
SP
GN
SN
DP
DP
DN
DN
8-Lead SOIC (TG)
Package may or may not include the following marks: Si or


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