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BD3538HFN-TR 데이터시트(PDF) 11 Page - Rohm

부품명 BD3538HFN-TR
상세설명  Termination Regulators for DDR-SDRAMs
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제조업체  ROHM [Rohm]
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Logo ROHM - Rohm

BD3538HFN-TR 데이터시트(HTML) 11 Page - Rohm

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TSZ02201-0J2J0A900980-1-2
© 2015 ROHM Co., Ltd. All rights reserved.
02.Nov.2015 Rev.001
www.rohm.com
TSZ22111・15・001
BD3538F
BD3538HFN
Operational Notes
– continued
12.
Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 13. Example of monolithic IC structure
13.
Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will exceed 175°C which will activate the TSD circuit that will turn OFF all output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
14.
Capacitor Across Output and GND
If a large capacitor is connected between the output pin and ground pin, current from the charged capacitor can flow
into the output pin and may destroy the IC when the VCC or IN pin is shorted to ground or pulled down to 0V. Use a
capacitor smaller than 1000µF between output and ground.
15.
Output Capacitor Resistor
Do not fail to connect a output capacitor to VREF output terminal for stabilization of output voltage. The capacitor
connected to VREF output terminal works as a loop gain phase compensator. Insufficient capacitance may cause an
oscillation. It is recommended to use a low temperature coefficient 1-10 µF ceramic capacitor, though it depends on
ambient temperature and load conditions. It is therefore requested to carefully check under the actual temperature
and load conditions to be applied.
16.
Output Capacitor
Do not fail to connect a capacitor to VTT output pin for stabilization of output voltage. This output capacitor works as
a loop gain phase compensator and an output voltage variation reducer in the event of sudden change in load.
Insufficient capacitance may cause an oscillation. And if the equivalent series resistance (ESR) of this capacitor is
high, the variation in output voltage increases in the event of sudden change in load. It is recommended to use a 220
µF functional polymer capacitor, though it depends on ambient temperature and load conditions. Using a low ESR
ceramic capacitor may reduce a loop gain phase margin and cause an oscillation, which may be improved by
connecting a resistor in series with the capacitor. It is therefore requested to carefully check under the actual
temperature and load conditions to be applied.
N
N
P
+
P
N
N
P
+
P Substrate
GND
N
P
+
N
N
P
+
N P
P Substrate
GND
GND
Parasitic
Elements
Pin A
Pin A
Pin B
Pin B
B
C
E
Parasitic
Elements
GND
Parasitic
Elements
C
B
E
Transistor (NPN)
Resistor
N Region
close-by
Parasitic
Elements


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