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LM2426TE 데이터시트(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM2426TE
상세설명  Monolithic Triple Channel 30 MHz DTV Driver
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2426TE 데이터시트(HTML) 6 Page - National Semiconductor (TI)

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Typical Performance Characteristics (V
CC = +180VDC,VBB = +8VDC,CL = 8pF, VOUT = 110VPP
(55V − 165V), Test Circuit - Figure 3 unless otherwise specified) (Continued)
TABLE 1. Power Dissipation for Various Video Patterns
Power Dissipation (W)
Pattern
Format
480i
480p
720p
1080i
Raster
2.4
2.4
2.4
2.4
Full White Field
6.1
6.1
6.0
6.5
White Box, 75% Screen Size
4.6
4.6
4.0
4.2
Gray Bars
4.8
4.8
4.7
5.0
Color Bars 75% Amplitude
3.9
4.0
4.0
4.1
Color Bars 100% Amplitude
4.3
4.3
4.3
4.5
SMPTE Color Bars
3.8
3.8
3.8
4.0
SMPTE 133
5.0
5.2
5.4
5.7
Cross Hatch 16x12
2.8
3.0
3.0
2.9
Resolution Chart
5.3
5.5
5.6
5.8
Multiburst
5.4
6.6
10.1
10.9
White Text on Black Background
5.2
7.1
11.1
12.3
Windows Pattern
4.0
4.5
6.4
6.6
Windows Pattern
4.7
5.2
6.7
7.0
Windows Pattern
6.0
6.7
8.6
9.4
Vertical Lines 5 On 5 Off
5.1
5.9
8.7
9.5
Vertical Lines 4 On 4 Off
5.3
6.3
9.8
10.8
Vertical Lines 3 On 3 Off
5.6
7.0
11.7
12.9
Vertical Lines 2 On 2 Off
6.3
8.5
14.4
16.2
Vertical Lines 1 On 1 Off
8.5
12.7
21.8
24.6
Note: Input from signal generator: tr,tf < 2 ns.
Theory of Operation
The LM2426TE is a high voltage monolithic three channel
CRT driver suitable for HDTV applications. The LM2426TE
operates with 180V and 8V power supplies. The part is
housed in the industry standard 11-lead TO-220 molded
plastic power package with thin leads for improved metal-to-
metal spacing.
The circuit diagram of the LM2426TE is shown in Figure 2.
The PNP emitter follower, Q5, provides input buffering. Q1
and Q2 form a fixed gain cascode amplifier with resistors R1
and R2 setting the gain at −53. Emitter followers Q3 and Q4
isolate the high output impedance of the cascode stage from
the capacitance of the CRT cathode which decreases the
sensitivity of the device to load capacitance. Q6 provides
biasing to the output emitter follower stage to reduce cross-
over distortion at low signal levels.
Figure 3 shows a typical test circuit for evaluation of the
LM2426TE. This circuit is designed to allow testing of the
LM2426TE in a 50
Ω environment without the use of an
expensive FET probe. In this test circuit, the two 4.99k
resistors form a 400:1 wideband, low capacitance probe
when connected to a 50
Ω coaxial cable and a 50Ω load
(such as a 50
Ω oscilloscope input). The input signal from the
generator is ac coupled to the base of Q5.
Application Hints
INTRODUCTION
National Semiconductor (NSC) is committed to provide ap-
plication information that assists our customers in obtaining
the best performance possible from our products. The fol-
lowing information is provided in order to support this com-
mitment. The reader should be aware that the optimization of
performance was done using a specific printed circuit board
designed at NSC. Variations in performance can be realized
due to physical changes in the printed circuit board and the
application. Therefore, the designer should know that com-
ponent value changes may be required in order to optimize
performance in a given application. The values shown in this
document can be used as a starting point for evaluation
purposes. When working with high bandwidth circuits, good
layout practices are also critical to achieving maximum per-
formance.
IMPORTANT INFORMATION
The LM2426TE performance is targeted for the HDTV mar-
ket. The application circuits shown in this document to opti-
mize performance and to protect against damage from CRT
arcover are designed specifically for the LM2426TE. If an-
other member of the LM242X family is used, please refer to
its datasheet.
www.national.com
6


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