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CDCLVP111-EP 데이터시트(PDF) 4 Page - Texas Instruments |
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CDCLVP111-EP 데이터시트(HTML) 4 Page - Texas Instruments |
4 / 23 page 4 CDCLVP111-SP SCAS946 – NOVEMBER 2016 www.ti.com Product Folder Links: CDCLVP111-SP Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings see (1) MIN MAX UNIT VCC Supply voltage (relative to VEE) –0.3 4.6 V VI Input voltage –0.3 VCC + 0.5 V VO Output voltage –0.3 VCC + 0.5 V IIN Input current ±20 mA VEE Negative supply voltage (relative to VCC) –4.6 0.3 V IBB Sink/source current –1 1 mA IO DC output current –50 mA TJ Maximum operating junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 6.3 Recommended Operating Conditions MIN NOM MAX UNIT VCC Supply voltage (relative to VEE) 2.375 2.5/3.3 3.8 V TJ Operating junction temperature –55 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) According to JESD 51-7 standard. 6.4 Thermal Information THERMAL METRIC(1) CDCLVP111-SP UNIT HFG (CFP) 36 PINS RθJA Junction-to-ambient thermal resistance(2) 107.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.2 °C/W RθJB Junction-to-board thermal resistance 98.9 °C/W ψJT Junction-to-top characterization parameter 29.2 °C/W ψJB Junction-to-board characterization parameter 91.36 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 13.4 °C/W |
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