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CDCLVP111-EP 데이터시트(PDF) 4 Page - Texas Instruments

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부품명 CDCLVP111-EP
상세설명  Low-Voltage 1:10 LVPECL With Selectable Input Clock Driver
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CDCLVP111-SP
SCAS946 – NOVEMBER 2016
www.ti.com
Product Folder Links: CDCLVP111-SP
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
see
(1)
MIN
MAX
UNIT
VCC
Supply voltage (relative to VEE)
–0.3
4.6
V
VI
Input voltage
–0.3
VCC + 0.5
V
VO
Output voltage
–0.3
VCC + 0.5
V
IIN
Input current
±20
mA
VEE
Negative supply voltage (relative to VCC)
–4.6
0.3
V
IBB
Sink/source current
–1
1
mA
IO
DC output current
–50
mA
TJ
Maximum operating junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
6.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VCC
Supply voltage (relative to VEE)
2.375
2.5/3.3
3.8
V
TJ
Operating junction temperature
–55
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
According to JESD 51-7 standard.
6.4 Thermal Information
THERMAL METRIC(1)
CDCLVP111-SP
UNIT
HFG (CFP)
36 PINS
RθJA
Junction-to-ambient thermal resistance(2)
107.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
33.2
°C/W
RθJB
Junction-to-board thermal resistance
98.9
°C/W
ψJT
Junction-to-top characterization parameter
29.2
°C/W
ψJB
Junction-to-board characterization parameter
91.36
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
13.4
°C/W


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