SSC-STW8T16C

March 2013

www.seoulsemicon.com

서식번호 : SSC-QP-7-07-12 (Rev.01)

2. Characteristics of STW8T16C

1) Electro-Optical characteristics at 65mA

2) Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Forward Current

100

mA

315

mW

Junction Temperature

125

ºC

Operating Temperature

-40 ~ +85

ºC

Storage Temperature

-40 ~ +100

ºC

ESD (HBM)

±

5,000V HBM

V

Parameter

Symbol

Value

Unit

Min

Typ

Max

Forward Voltage

2.8

-

3.3

V

Reverse Voltage

-

0.9

1.2

V

(3,700~8,200 K)

-

9.0

(27.5)

-

cd

(lm)

(2,600~3,700 K)

-

8.2

(24.6)

-

cd

(lm)

Correlated Color

Temperature

CCT

2,600

-

8,200

K

-

120

-

-

Color Rendering Index*

Ra

80

-

90

-

Thermal resistance

(J to S)

-

14

-

K/W

(Ta=25℃, RH30%)

Notes :

All measurements were made under the standardized environment of SSC.

LED’s properties might be different from suggested values like above and below tables if

operation condition will be exceeded our parameter range.

[1] The luminous intensity IV was measured at the peak of the spatial pattern which may not be

aligned with the mechanical axis of the LED package.

[2] 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.

[3] Care is to be taken that power dissipation does not exceed the absolute maximum rating of

the product.

* Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.007