전자부품 데이터시트 검색엔진 |
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GS1M 데이터시트(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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GS1M 데이터시트(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
3 / 4 page Technical Data Green Products Data Sheet N0553, Rev. A • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • GS1A THRU GS1M Maximum Ratings and Electrical characteristics @TA = 25°C unless otherwise specified Characteristic Symbol GS1A GS1B GS1D GS1G GS1J GS1K GS1M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Average Rectified Output Current @TL= 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @ IF = 1.0 A VF 1.10 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 5.0 200 μA Reverse Recovery Time(Note1) trr 2.5 μS Typical Junction Capacitance(Note2) CJ 15 pF Typical Thermal Resistance Junction to Lead (Note 3) RθJL 30 °C/W Operating Temperature Range TJ -65 to +175 °C Storage Temperature Range TSTG -65 to +175 °C Note: 1. Measured with IF= 0.5A, IR=1.0A, Irr=0.25A. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Mounted on P.C. Board with 8.0mm 2 copper pad areas. |
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