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SI1028X 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI1028X 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 63862 S12-1956-Rev. B, 13-Aug-12 Vishay Siliconix Si1028X This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Soure-Drain Diode Forward Voltage Threshold Voltage 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 Q g - Total Gate Charge (nC) V DS = 24 V V DS = 15 V V DS = 7.5 V I D = 0.5 A 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 1.15 1.3 1.45 1.6 1.75 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.55 0.85 1.15 1.45 1.75 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 0.5 A V GS = 10 V V GS = 4.5 V 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 0.5 A 0 0.45 0.9 1.35 1.8 2.25 2.7 0.01 0.1 1 10 100 Time (s) |
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