IRLH7134PBF datasheet(3/10 Pages) INFINEON

부품명	IRLH7134PBF

상세설명	HEXFET짰 Power MOSFET

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IRLH7134PbF

3

2016-08-01

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

VGS

TOP

15.0V

10.0V

4.50V

4.00V

3.30V

3.10V

2.90V

BOTTOM

2.70V

60µs PULSE WIDTH

Tj = 25°C

2.70V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

VGS

TOP

15.0V

10.0V

4.50V

4.00V

3.30V

3.10V

2.90V

BOTTOM

2.70V

60µs PULSE WIDTH

Tj = 150°C

2.70V

1

2

3

4

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 150°C

VDS = 25V

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 50A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

2040

6080

100

QG Total Gate Charge (nC)

0

2

4

6

8

10

12

14

VDS= 32V

VDS= 20V

VDS= 8.0V

ID= 50A

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