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IRF7805PBF 데이터시트(PDF) 2 Page - Infineon Technologies AG

부품명 IRF7805PBF
상세설명  HEXFET짰 Chip-Set for DC-DC Converters
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IRF7805PbF
2
2016-8-23
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
300µs; duty cycle  2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - QOSS
Ris measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 
30
–––
–––
V
VGS = 0V, ID = 250µA
RDS(on)
Static Drain-to-Source On-Resistance 
–––
9.2
11
m
VGS = 4.5V, ID = 7.0A 
VGS(th)
Gate Threshold Voltage 
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
70
µA
VDS = 30V, VGS = 0V
–––
–––
10
VDS = 24V, VGS = 0V
–––
–––
150
VDS = 24V,VGS = 0V,TJ = 100°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge 
–––
22
31
nC  
Qgs1
Pre -Vth Gate-to-Source Charge
–––
3.7
–––
VGS = 5.0V
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.4
–––
VDS = 16V
Qgd
Gate-to-Drain Charge
–––
6.8
–––
ID = 7.0A
Qsw
Switch Charge (Qgs2 + Qgd) 
–––
8.2
11.5
Qoss
Output Charge 
–––
30
36
nC VDS = 16V, VGS = 0V
RG
Gate Resistance
0.5
–––
1.7
 
td(on)
Turn-On Delay Time
–––
16
–––
ns
VDD = 16V,VGS = 4.5V 
tr
Rise Time
–––
20
–––
ID = 7.0A
td(off)
Turn-Off Delay Time
–––
38
–––
RG = 2
tf
Fall Time
–––
16
–––
Resistive Load
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.5
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
106
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C,IS = 7.0A,VGS = 0V 
Qrr
Reverse Recovery Charge 
–––
88
–––
di/dt = 700A/µs
VDS =16V, VGS= 0V, IS= 7.0A 
Qrr
Reverse Recovery Charge 
–––
55
–––
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A 
nC


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