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IRF7805PBF 데이터시트(PDF) 2 Page - Infineon Technologies AG |
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IRF7805PBF 데이터시트(HTML) 2 Page - Infineon Technologies AG |
2 / 6 page IRF7805PbF 2 2016-8-23 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300µs; duty cycle 2%. When mounted on 1" in square copper board, t < 10 sec. Typ = measured - QOSS R is measured at TJ of approximately 90°C. Devices are 100% tested to these parameters. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance ––– 9.2 11 m VGS = 4.5V, ID = 7.0A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 70 µA VDS = 30V, VGS = 0V ––– ––– 10 VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V,VGS = 0V,TJ = 100°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– 22 31 nC Qgs1 Pre -Vth Gate-to-Source Charge ––– 3.7 ––– VGS = 5.0V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– VDS = 16V Qgd Gate-to-Drain Charge ––– 6.8 ––– ID = 7.0A Qsw Switch Charge (Qgs2 + Qgd) ––– 8.2 11.5 Qoss Output Charge ––– 30 36 nC VDS = 16V, VGS = 0V RG Gate Resistance 0.5 ––– 1.7 td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 16V,VGS = 4.5V tr Rise Time ––– 20 ––– ID = 7.0A td(off) Turn-Off Delay Time ––– 38 ––– RG = 2 tf Fall Time ––– 16 ––– Resistive Load Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.5 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 106 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 7.0A,VGS = 0V Qrr Reverse Recovery Charge ––– 88 ––– di/dt = 700A/µs VDS =16V, VGS= 0V, IS= 7.0A Qrr Reverse Recovery Charge ––– 55 ––– di/dt = 700A/µs (with 10BQ040) VDS =16V, VGS= 0V, IS= 7.0A nC |
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