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STB5N80K5 데이터시트(PDF) 5 Page - STMicroelectronics |
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STB5N80K5 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 15 page STB5N80K5 Electrical characteristics DocID028512 Rev 2 5/15 Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 400 V, ID = 2 A, RG = 4.7 Ω VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 12.7 - ns tr Rise time - 11.7 - ns td(off) Turn-off delay time - 23 - ns tf Fall time - 14.8 - ns Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 4 A ISDM(1) Source-drain current (pulsed) - 16 A VSD(2) Forward on voltage ISD = 4 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs,VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 265 ns Qrr Reverse recovery charge - 1.59 µC IRRM Reverse recovery current - 12 A trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 386 ns Qrr Reverse recovery charge - 2.18 µC IRRM Reverse recovery current - 11.3 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. |
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