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IRF7580MTRPBF 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRF7580MTRPBF
상세설명  DirectFET짰 N-Channel Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7580MTRPBF 데이터시트(HTML) 3 Page - International Rectifier

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IRF7580MTRPbF
 
3
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© 2014 International Rectifier
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February 13, 2014
D
S
G
Dynamic @ TJ = 25°C (unless otherwise specified)
   
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
190
–––
–––
S
VDS = 10V, ID = 70A
Qg
Total Gate Charge
–––
120
180
nC
ID = 70A
Qgs
Gate-to-Source Charge
–––
32
–––
VDS =30V
Qgd
Gate-to-Drain ("Miller") Charge
–––
36
–––
VGS = 10V 
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
84
–––
ID = 70A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
20
–––
ns
VDD = 30V
tr
Rise Time
–––
38
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
53
–––
RG = 2.7
tf
Fall Time
–––
21
–––
VGS = 10V 
Ciss
Input Capacitance
––– 6510 –––
pF
VGS = 0V
Coss
Output Capacitance
–––
610
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
360
–––
ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
620
–––
VGS = 0V, VDS = 0V to 48V 
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
770
–––
VGS = 0V, VDS = 0V to 48V 
Diode Characteristics
   
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
105
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
460
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ= 25°C,IS = 70A, VGS = 0V
dv/dt
Peak Diode Recovery 
–––
4.1
––– V/ns TJ =175°C,IS =70A, VDS = 60V
trr
Reverse Recovery Time
–––
41
–––
ns TJ = 25° C VR = 51V,
–––
44
–––
TJ = 125°C IF = 70A
Qrr
Reverse Recovery Charge
–––
55
–––
TJ = 25°C
di/dt = 100A/µs 
–––
71
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.5
–––
A
TJ = 25°C
nC
Notes:

Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 42µH
RG = 50, IAS = 70A, VGS =10V.
ISD ≤ 70A, di/dt ≤ 980A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the
same charging time as Coss while VDS is rising from 0
to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the
same energy as Coss while VDS is rising from 0 to
80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Ris measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L= 42µH, RG = 50, IAS = 70A,
VGS =10V.


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