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MC74VHCT245A 데이터시트(PDF) 3 Page - ON Semiconductor |
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3 / 7 page MC74VHCT245A http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions VCC V TA = 25°C TA = − 40 to 85°C Unit Min Typ Max Min Max VIH Minimum High−Level Input Voltage 4.5 to 5.5 2.0 2.0 V VIL Maximum Low−Level Input Voltage 4.5 to 5.5 0.8 0.8 V VOH Minimum High−Level Output Voltage Vin = VIH or VIL IOH = − 50mA 4.5 4.4 4.5 4.4 V IOH = − 8mA 4.5 3.94 3.80 VOL Maximum Low−Level Output Voltage Vin = VIH or VIL IOL = 50mA 4.5 0.0 0.1 0.1 V IOL = 8mA 4.5 0.36 0.44 Iin Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 mA IOZ Maximum 3−State Leakage Current Vin = VIL or VIH Vout = VCC or GND 5.5 ± 0.25 ± 2.5 mA ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 4.0 40.0 mA ICCT Quiescent Supply Current Per Input: VIN = 3.4V Other Input: VCC or GND 5.5 1.35 1.50 mA IOPD Output Leakage Current VOUT = 5.5V 0 0.5 5.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) Symbol Parameter Test Conditions TA = 25°C TA = − 40 to 85°C Unit Min Typ Max Min Max tPLH, tPHL Maximum Propagation Delay A to B or B to A VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 4.9 5.4 7.7 8.7 1.0 1.0 8.5 9.5 ns tPZL, tPZH Output Enable Time OE to A or B VCC = 5.0 ± 0.5V CL = 15pF RL = 1kW CL = 50pF 9.4 9.9 13.8 14.8 1.0 1.0 15.0 16.0 ns tPLZ, tPHZ Output Disable Time OE to A or B VCC = 5.0 ± 0.5V CL = 50pF RL = 1kW 10.1 15.4 1.0 16.5 ns tOSLH, tOSHL Output to Output Skew VCC = 5.0 ± 0.5V CL = 50pF (Note 1) 1.0 1.0 ns Cin Maximum Input Capacitance 4 10 10 pF Cout Maximum 3−State Output Capacitance (Output in High−Impedance State) 13 pF CPD Power Dissipation Capacitance (Note 2) Typical @ 25 °C, VCC = 5.0V pF 16 1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per bit). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) Symbol Parameter TA = 25°C Unit Typ Max VOLP Quiet Output Maximum Dynamic VOL 1.2 1.6 V VOLV Quiet Output Minimum Dynamic VOL −1.2 −1.6 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V |
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