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TPC8303 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 TPC8303
상세설명  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
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TPC8303
2002-04-18
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
125
Single-device operation
(Note 3a)
Rth (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
278
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on lower left of the marking indicates Pin 1.
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
Type
TPC8303
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(b)


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