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TPC8402 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TPC8402 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TPC8402 2002-05-07 3 P-0ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−OFF current IDSS VDS = −30 V, VGS = 0 V — — −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 — — Drain−source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −15 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V RDS (ON) VGS = −4 V, ID = −2.2 A — 55 65 Drain−source ON resistance RDS (ON) VGS = −10 V, ID = −2.2 A — 27 35 mΩ Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.5 7 — S Input capacitance Ciss — 970 — Reverse transfer capacitance Crss — 180 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 370 — pF Rise time tr — 17 — Turn−ON time ton — 20 — Fall time tf — 75 — Switching time Turn−OFF time toff — 160 — ns Total gate charge (Gate−source plus gate−drain) Qg — 28 — Gate−source charge 1 Qgs1 — 6 — Gate−drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −4.5 A — 12 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP — — — −18 A Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V — — 1.2 V |
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