TPC8402 datasheet(3/11 Pages) TOSHIBA

부품명	TPC8402

상세설명	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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3 / 11 page

TPC8402

2002-05-07

3

P-0ch

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

µA

Drain cut−OFF current

IDSS

VDS = −30 V, VGS = 0 V

—

−10

µA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

—

Drain−source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−15

—

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

—

−2.0

V

RDS (ON)

VGS = −4 V, ID = −2.2 A

—

55

65

Drain−source ON resistance

RDS (ON)

VGS = −10 V, ID = −2.2 A

—

27

35

mΩ

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −2.2 A

3.5

7

—

S

Input capacitance

Ciss

—

970

—

Reverse transfer capacitance

Crss

—

180

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

370

—

pF

Rise time

tr

—

17

—

Turn−ON time

ton

—

20

—

Fall time

tf

—

75

—

Switching time

Turn−OFF time

toff

—

160

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

28

—

Gate−source charge 1

Qgs1

—

6

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V, ID = −4.5 A

—

12

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

−18

A

Forward voltage (diode)

VDSF

IDR = −4.5 A, VGS = 0 V

—

1.2

V

유사한 부품 번호 - TPC8402

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	TPC8401	750Kb / 11P	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
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유사한 설명 - TPC8402

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	TPC8401	750Kb / 11P	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
	TPC8303	520Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
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	SSM3J14T	179Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
	SSM6J501NU	212Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSVI)
	SSM3J334R	235Kb / 6P	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

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TPC8402 데이터시트(PDF) 3 Page - Toshiba Semiconductor

TPC8402 데이터시트(HTML) 3 Page - Toshiba Semiconductor

유사한 부품 번호 - TPC8402

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