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TPD1030F 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TPD1030F 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page TPD1030F 2000-03-01 4/5 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note3) Rth (ch-a) 62.5 °C/W Note3: Drive operation: Mount on glass epoxy boad [1 inch 2 × 0.8 t] (in the two devices driving) Electrical Characteristics (Tch ==== 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Drain-source clamp voltage V (CL) DSS VIN = 0 V, ID = 1 mA 40 60 V Input threshold voltage Vth VDS = 13 V, ID = 10 mA 1.0 2.8 V Protective circuit operation input voltage range VIN (opr) 3 7 V Draint cut-off current IDSS VIN = 0 V, VDS = 30 V 10 µA IIN (1) VIN = 5 V, at normal operation 300 Input current IIN (2) VIN = 5 V, when protective circuit is actuated 390 µA Drain-source on resistance RDS (ON) VIN = 5 V, ID = 0.5 A 0.44 0.6 Ω Overtemperature protection TS VIN = 5 V 150 160 °C Overcurrent protection IS VIN = 5 V 1.0 A tON 1 30 Switching time tOFF 1 VDD = 13 V, VIN = 5 V, ID = 0.5 A 30 µs Source-drain diode forward voltage VDSF IF = 1 A, VIN = 0 V 1.7 V Test Circuit 1 Switching time measuring circuit Test Circuit Measured Waveforms VIN Waveform VOUT Waveform 5 V 90% tON 10% 10% 90% tOFF 13 V To be set so that ID = 0.5 A. V TPD1030F IN OUT GND Preliminary |
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