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LM3303M 데이터시트(PDF) 2 Page - National Semiconductor (TI) |
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LM3303M 데이터시트(HTML) 2 Page - National Semiconductor (TI) |
2 / 10 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Storage Temperature Range Ceramic DIP b 65 Cto a175 C Molded DIP and SO-14 b 65 Cto a150 C Operating Temperature Range Industrial (LM3303) b 40 Cto a85 C Commercial (LM3403) 0 Cto a70 C Lead Temperature Ceramic DIP (Soldering 60 sec) 300 C Molded DIP and SO-14 (Soldering 10 sec) 265 C Internal Power Dissipation (Notes 1 2) 14L-Ceramic DIP 136W 14L-Molded DIP 104W SO-14 093W Supply Voltage between Va and Vb 36V Differential Input Voltage (Note 3) g 30V Input Voltage (Vb) b 03V to Va ESD Tolerance (To Be Determined) LM3303 and LM3403 Electrical Characteristics TA e 25 C VCC e g15V unless otherwise specified Symbol Parameter Conditions LM3303 LM3403 Units Min Typ Max Min Typ Max VIO Input Offset Voltage 20 80 20 80 mV IIO Input Offset Current 30 75 30 50 nA IIB Input Bias Current 200 500 200 500 nA ZI Input Impedance 03 10 03 10 MX ICC Supply Current VO e 0V RL e % 28 70 28 70 mA CMR Common Mode Rejection RS s 10 kX 70 90 70 90 dB VIR Input Voltage Range a 12V a 125V a 13V a 135V V to Vb to Vb to Vb to Vb PSRR Power Supply 30 150 30 150 m VV Rejection Ratio IOS Output Short Circuit Current g 10 g 30 g 45 g 10 g 30 g 45 mA (Per Amplifier) (Note 4) AVS Large Signal Voltage Gain VO e g10V 20 200 20 200 VmV RL t 20 kX VOP Output Voltage Swing RL e 10 kX g 12 125 g 12 a 135 V RL e 20 kX g 10 12 g 10 g 13 TR Transient Rise Time VO e 50 mV 03 03 m s Response Fall Time AV e 10 RL e 10 kX Overshoot VO e 50 mV 50 50 % AV e 10 RL e 10 kX BW Bandwidth VO e 50 mV 10 10 MHz AV e 10 RL e 10 kX SR Slew Rate VI eb10V to a10V 06 06 V ms AV e 10 2 |
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