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SST26VF016B 데이터시트(PDF) 1 Page - Microchip Technology

부품명 SST26VF016B
상세설명  2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
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제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

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 2014-2015 Microchip Technology Inc.
DS20005262C-page 1
Features
• Single Voltage Read and Write Operations
- 2.7-3.6V or 2.3-3.6V
• Serial Interface Architecture
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 2.7-2.6V: 104 MHz max
- 2.3-3.6V: 80 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby Current: 15 µA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay blocks
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte,
Secure ID
- 64 bit unique, factory pre-programmed
identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C
• Packages Available
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIJ (5.28 mm)
- 8-lead SOIC (3.90 mm)
• All devices are RoHS compliant
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26VF016B also supports
full command-set compatibility to traditional Serial
Peripheral Interface (SPI) protocol. System designs
using SQI flash devices occupy less board space and
ultimately lower system costs.
All members of the 26 Series, SQI family are manufac-
tured with proprietary, high-performance CMOS Super-
Flash® technology. The split-gate cell design and thick-
oxide tunneling injector attain better reliability and man-
ufacturability compared with alternate approaches.
SST26VF016B significantly improves performance and
reliability, while lowering power consumption. These
devices write (Program or Erase) with a single power
supply of 2.3-3.6V. The total energy consumed is a
function of the applied voltage, current, and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less
than alternative flash memory technologies.
SST26VF016B is offered in 8-contact WDFN (6 mm x
5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC
(3.90 mm). See Figures 2-1 through 2-3 for pin assign-
ments.
SST26VF016B
2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory


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