2SD1678 datasheet(2/2 Pages) ISC

부품명	2SD1678

상세설명	isc Silicon NPN Darlington Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Darlington Power Transistor

2SD1678

ELECTRICAL CHARACTERISTICS

T

B

C

B

=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA, RBE= ∞

100

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA, RBE= ∞

100

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 5mA ,IC= 0

7

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A , IB= 16mA

2.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 15A , IB= 150mA

3.0

V

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 8A , IB= 16mA

2.5

V

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 15A , IB= 150mA

3.5

V

ICBO

Collector Cutoff current

VCB= 100V, IE= 0

0.1

mA

ICEO

Collector Cutoff current

VCE= 100V, RBE= ∞

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

5.0

mA

hFE-1

DC Current Gain

IC= 8A ; VCE= 3V

1000

20000

hFE-2

DC Current Gain

IC= 15A ; VCE= 3V

750

Switching Times

ton

Turn-on Time

IC = 8A,IB1 = IB2= 16mA

2.5

μ

s

tstg

Storage Time

16

μ

s

tf

Fall Time

5.0

μ

s

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