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2SD2141 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2SD2141
상세설명  isc Silicon NPN Darlington Power Transistor
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD2141
DESCRIPTION
·
High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 4A
·
Incorporating a built-in zener diode
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in ignitor, driver for solenoid，motor and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330-430
V
VCEO
Collector-Emitter Voltage
330-430
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Base Current-Peak
10
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
35
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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