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BC848CDW 데이터시트(PDF) 5 Page - Yea Shin Technology Co., Ltd

부품명 BC848CDW
상세설명  Dual General Purpose Transistors
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제조업체  YEASHIN [Yea Shin Technology Co., Ltd]
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REV.02 20120903
BC847BDW/BC848CDW
DEVICE CHARACTERISTICS
SINGLE PULSE
t 1
Z
θJA (t) = r(t) R θJA
R
θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk) – T C = P (pk) R
θJC (t)
t 2
P (pk)
DUTY CYCLE, D = t 1 /t 2
D=0.5
0.2
0.1
0.05
0.02
0.01
t, TIME (ms)
Figure 11. Thermal Response
0
1.0
10
100
1.0K
10K
100K
1.0M
1.0
0.1
0.01
0.001
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V
CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk) < 150°C. T J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.


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