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BC808.25LT1G 데이터시트(PDF) 1 Page - ON Semiconductor |
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BC808.25LT1G 데이터시트(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2004 October, 2016 − Rev. 5 Publication Order Number: BC808−25LT1/D 1 BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −25 V Collector − Base Voltage VCBO −30 V Emitter − Base Voltage VEBO −5.0 V Collector Current − Continuous IC −500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION SOT−23 CASE 318 STYLE 6 1 2 3 1 5x M G G 5x = Device Code x = F or G M = Date Code* G =Pb−Free Package MARKING DIAGRAM (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. |
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