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BC808.25LT1G 데이터시트(PDF) 1 Page - ON Semiconductor

부품명 BC808.25LT1G
상세설명  General Purpose Transistors
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2004
October, 2016 − Rev. 5
Publication Order Number:
BC808−25LT1/D
1
BC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−25
V
Collector − Base Voltage
VCBO
−30
V
Emitter − Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC
−500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 6
1
2
3
1
5x M G
G
5x
= Device Code
x = F or G
M
= Date Code*
G
=Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.


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