Si82393CD-IS datasheet(10/38 Pages) SILABS

부품명	Si82393CD-IS

상세설명	Enhanced output UVLO safety

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2.4 Power Dissipation Considerations

Proper system design must assure that the Si8239x operates within safe thermal limits across the entire load range. The Si8239x total

power dissipation is the sum of the power dissipated by bias supply current, internal parasitic switching losses, and power dissipated by

the series gate resistor and load. Equation 1 shows Si8239x power dissipation.

PD = VDDI * IDDI + 2 * VDD2 * IDD2 + f * CL * VDD2

2

*

( Rp

Rp + Rg )

+ f * CL * VDD2

2

*

( Rn

Rn + Rg )

+ 2 * f * Cint * VDD2

2

Equation 1.

Note: Where:

• PD is the total Si8239x device power dissipation (W)

• IDDI is the input side maximum bias current (from table 4.1, 3.8 mA)

• IDD2 is the driver side maximum bias current (from table 4.1, 6.5 mA)

• Cint is the internal parasitic capacitance (370 pf)

• VDDI is the input side VDD supply voltage (2.5 V to 5. 5V)

• VDD2 is the driver side supply voltage (10 V to 24 V)

• f is the switching frequency (Hz)

• CL is the load capacitance (F)

• RG is the external gate resistor (Ω)

• RP is the RDS(ON) of the driver pull-up device (2.7 Ω)

• Rn is the RDS(ON) of the driver pull-down device (1 Ω)

Example calculation (using IDDx values from Table 4.1 for Si82397)

VDDI = 5 V

VDD2 = 12 V

f = 350 kHz

RG = 22 Ω

CL = 2 nF

PD = 5 * .0021 + 2 * 12 * .0025 + 350000 *

(2*10−9)*144*( 2.7

2.7 + 22 )

+ 350000 *

(2*10−9)*144*( 1

1 + 22 )

+ 2 * 350000 *

(370*10−12)*144

PD = 0.123 W is the total dissipated power by the Si8239x package.

From this, the driver junction temperature can be calculated using Equation 2.

T j = TA + PD * θ ja

Equation 2.

Note: Where:

• Tj is the junction temperature (°C)

• TA is the ambient temperature (°C)

• PD is the power dissipated in the package (W)

• Θja is the thermal resistance of the package (100 °C/W from table 4.7)

For this example, assume that TA is 25 °C.

T j = 25 + 0.123 * 100

Tj is 37.3 °C.

Si8239x Data Sheet

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