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BTA208B-800E 데이터시트(PDF) 1 Page - NXP Semiconductors

부품명 BTA208B-800E
상세설명  Three quadrant triacs guaranteed commutation
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA208B-800E 데이터시트(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Objective specification
Three quadrant triacs
BTA208B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in
BTA208B-
500D
600D
-
motor control circuits or with other
BTA208B-
500E
600E
800E
highly inductive loads. These devices
BTA208B-
500F
600F
800F
balance
the
requirements
of
V
DRM
Repetitive peak off-state
500
600
800
V
commutation performance and gate
voltages
sensitivity. The "sensitive gate" E
I
T(RMS)
RMS on-state current
8
8
8
A
series and "logic level" D series are
I
TSM
Non-repetitive peak on-state
65
65
65
A
intended for interfacing with low power
current
drivers, including micro controllers.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
8
A
T
mb ≤ 102 ˚C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 ˚C prior to
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
71
A
I
2tI2t for fusing
t = 10 ms
-
21
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 12 A; IG = 0.2 A;
100
A/
µs
on-state current after
dI
G/dt = 0.2 A/µs
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
13
mb
2
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
µs.
September 1997
1
Rev 1.000


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