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AD8250-EVALZ 데이터시트(PDF) 7 Page - Analog Devices

부품명 AD8250-EVALZ
상세설명  10 MHz, 20 V/關s, G = 1, 2, 5, 10 iCMOS Programmable Gain Instrumentation Amplifier
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제조업체  AD [Analog Devices]
홈페이지  http://www.analog.com
Logo AD - Analog Devices

AD8250-EVALZ 데이터시트(HTML) 7 Page - Analog Devices

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AD8250
Data Sheet
Rev. C | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
±17 V
Power Dissipation
See Figure 4
Output Short-Circuit Current
Indefinite1
Common-Mode Input Voltage
+VS + 13 V, −VS − 13 V
Differential Input Voltage
+VS + 13 V, −VS − 13 V2
Digital Logic Inputs
±VS
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range3
−40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
140°C
θJA (Four-Layer JEDEC Standard Board)
112°C/W
Package Glass Transition Temperature
140°C
1
Assumes that the load is referenced to midsupply.
2
Current must be kept to less than 6 mA.
3
Temperature for specified performance is −40°C to +85°C. For performance
to 125°C, see the Typical Performance Characteristics section.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8250 package is
limited by the associated rise in junction temperature (TJ) on
the die. The plastic encapsulating the die locally reaches the
junction temperature. At approximately 140°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8250. Exceeding
a junction temperature of 140°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (θJA),
the ambient temperature (TA), and the total power dissipated in
the package (PD) determine the junction temperature of the die.
The junction temperature is calculated as
TJ = TA + (PD × θJA)
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming that the load (RL) is referenced
to midsupply, the total drive power is VS/2 × IOUT, some of which
is dissipated in the package and some in the load (VOUT × IOUT).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
PD = Quiescent Power + (Total Drive Power − Load Power)
(
)
L
OUT
L
OUT
S
S
S
D
R
V
R
V
V
I
V
P
2
2


×
+
×
=
In single-supply operation with RL referenced to −VS, the worst
case is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θJA.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a four-layer JEDEC
standard board.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–40
–20
120
100
80
60
40
20
0
AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION


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