전자부품 데이터시트 검색엔진 |
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ADF5901WCCPZ 데이터시트(PDF) 7 Page - Analog Devices |
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ADF5901WCCPZ 데이터시트(HTML) 7 Page - Analog Devices |
7 / 27 page ADF5901 Data Sheet Rev. A | Page 6 of 26 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating AHI to GND −0.3 V to +3.9 V AHI to TX_AHI −0.3 V to +0.3 V AHI to RF_AHI −0.3 V to +0.3 V AHI to VCO_AHI −0.3 V to +0.3 V AHI to DVDD −0.3 V to +0.3 V VTUNE to GND −0.3 V to +3.6 V Digital Input/Output Voltage to GND −0.3 V to DVDD + 0.3 V Operating Temperature Range −40°C to +105°C Storage Temperature Range −65°C to +150°C Maximum Junction Temperature 150°C θJA Thermal Impedance1 (Paddle Soldered) 40.83 °C/W Reflow Soldering Peak Temperature 260°C Time at Peak Temperature 40 sec Transistor Count CMOS 177,381 Bipolar 2315 ESD Charged Device Model 250 V Human Body Model 2000 V 1 Two signal planes (that is, on top and bottom surfaces of the board), two buried planes, and nine vias. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION |
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