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PM50RSE120 데이터시트(Datasheet) 1 Page - Mitsubishi Electric Semiconductor

부품명 PM50RSE120
상세내용  INTELLIGENT POWER MODULES
PDF  6 Pages
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제조사  MITSUBISHI [Mitsubishi Electric Semiconductor]
홈페이지  http://www.mitsubishichips.com
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
PM50RSE120
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1
µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
•3
φ 50A, 1200V Current-sense IGBT for 15kHz switching
• 15A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 5.5/7.5kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
Terminal code
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. Br
13. UN
14. VN
15. WN
16. FO
A : DETAIL
16
15
14
13
12
11
10
9
78
6
5
4
3
2
1
WV
U
A
MOUNTING HOLES
Screwing depth
Min9.0
12
2-
φ2.54
110±1
95±0.5
24.5
0.5±0.3
3.22
67.4
26
26
17.02
2-2.54
2-2.54
6-2.54
2-2.54
4-R6
6-M5NUTS
4-
φ5.5
10.16
10.16
10.16
LABEL
3.22
2-2.54
φ2.54
22
21.2
–0.5
+1.0
16-
0.64
0.64




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