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PM75RSE120 데이터시트(Datasheet) 3 Page - Mitsubishi Electric Semiconductor

부품명 PM75RSE120
상세내용  INTELLIGENT POWER MODULES
PDF  6 Pages
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제조사  MITSUBISHI [Mitsubishi Electric Semiconductor]
홈페이지  http://www.mitsubishichips.com
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
TOTAL SYSTEM
3.2
2.8
3.5
2.5
0.3
1.0
3.5
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Test Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
0.5
2.4
2.1
2.5
1.0
0.15
0.4
2.5
0.7
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 15V
↔0V
VCC = 600V, IC = 75A
Tj = 125
°C
Inductive Load (upper and lower arm)
(Fig. 3)
VCE = VCES, VCIN = 15V
(Fig. 4)
VD = 15V, IC = 75A
VCIN = 0V, Pulsed
(Fig. 1)
V
mA
V
µs
Unit
0.30
0.47
0.43
1.0
0.17
0.27
0.30
0.64
0.027
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part (Note-1)
Brake FWDi part (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part (Note-2)
Brake FWDi part (Note-2)
Case to fin, Thermal grease applied (per 1 module)
Symbol
Parameter
Test Condition
Unit
Limits
Min.
Typ.
Max.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
WV
U
Tc
67mm
Parameter
Symbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
TC
Tstg
Viso
Ratings
VCC(PROT)
800
1000
–20 ~ +100
–40 ~ +125
2500
Unit
V
°C
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125
°C Start
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) TC measurement point is as shown below. (Base plate depth 3mm)




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