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FDD6685 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDD6685 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD6685 Rev D (W) Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDD6685 FDD6685 13” 12mm 2500 units Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 4) EAS Single Pulse Drain-Source Avalanche Energy ID = –11 A 42 mJ IAS Maximum Drain-Source Avalanche Current –11 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –24 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.8 –3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –11 A VGS = –4.5 V, ID = –9 A VGS = –10 V,ID = –11 A,TJ=125 °C 14 21 20 20 30 m Ω ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –5 V, ID = –11 A 26 S Dynamic Characteristics Ciss Input Capacitance 1715 pF Coss Output Capacitance 440 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 225 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.6 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 17 31 ns tr Turn–On Rise Time 11 21 ns td(off) Turn–Off Delay Time 43 68 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 21 34 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge 9 nC Qgd Gate–Drain Charge VDS = –15V, ID = –11 A, VGS = –5 V 4 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V Trr Diode Reverse Recovery Time 26 ns Qrr Diode Reverse Recovery Charge IF = –11 A, diF/dt = 100 A/µs 13 nC |
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