WFU4N65S datasheet(3/7 Pages) WINSEMI

부품명	WFU4N65S

상세설명	Super-Junction Power MOSFET

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제조업체	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

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WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WFU4N65S Product Description

650V

650V Super-Junction

Super-Junction

Super-Junction Power

Power

Power MOSFET

MOSFET

Fig.1 On-Region characteristics

Fig.2 Transfer characteristics

Fig.3 On-Resistance Variation vs Drain

Current

Fig.4 Threshold Voltage vs. Temperature

Fig.5 Breakdown Voltage vs.Temperature

Fig.6 On-Resistance vs.Temperature

Junction temperatureT

( C)

J

。

1 . 2

1 . 1

1

0 . 9

0 . 8

0 . 7

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

1 0 0

1 2 0 1 4 0

1 6 0

V =0V

Puls e tes t

G S

I =0.25mA

D S

Junction temperatureT

( C)

J

。

2 . 5

2

1 . 5

1

0 . 5

0

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

1 0 0

1 2 0

1 4 0

1 6 0

V =10V

Pu lse te st

I =2A

1 . 5

1 . 4

1 . 3

1 . 2

1 . 1

1

0 . 9

0 . 8

0 . 7

0 . 6

0

5

1 0

1 5

2 0

1 . 3

1 . 2

1 . 1

1

0 . 9

0 . 8

0 . 7

0 . 6

0 . 5

- 6 0

- 4 0

- 2 0

0

2 0

4 0

6 0

8 0

1 0 0

1 2 0

1 4 0

1 6 0

Junction temperatureT

( C)

J

。

I =0.25mA

Pulse test

D S

Drain Current I

(A)

D

8

7

6

5

4

3

2

1

0

4

6

1 2

1 6

C om m on Sourc e

Tc =25 C

Puls e Tes t

。

V

=10V

G S

V

=7V

G S

V

=6.5V

G S

V

=6V

G S

V

=5.5V

G S

Drain-source voltage V

(V)

D S

1 0

9

8

7

6

5

4

3

2

1

0

2

4

6

8

Gate-source voltage V

(V)

G S

C om m on Sourc e

Tc =25 C

V =20V

Puls e Tes t

。

D S

유사한 부품 번호 - WFU4N65S

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Shenzhen Winsemi Microe...	WFU4N60	490Kb / 7P	Silicon N-Channel MOSFET
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WFU4N65S 데이터시트(PDF) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd

WFU4N65S 데이터시트(HTML) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd

유사한 부품 번호 - WFU4N65S

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