전자부품 데이터시트 검색엔진 |
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WFF18N50 데이터시트(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF18N50 데이터시트(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 8 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFF18N50 Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WT-F026-Rev.A1 Jan.2014 1110 Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25℃) 18* A Continuous Drain Current(@Tc=100℃) 12.7* A IDM Drain Current Pulsed (Note1) 71* A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 900 mJ IAR Avalanche Current (note 1) 18 A EAR Repetitive Avalanche Energy (Note1) 22.7 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 39 W Derating Factor above 25℃ 0.31 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 3.2 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W G D S |
유사한 부품 번호 - WFF18N50_14 |
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유사한 설명 - WFF18N50_14 |
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