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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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WFF7N65S 데이터시트(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF7N65S 데이터시트(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 6 page  Copyr ight@Wins emi Mic roelectronic s Co., Ltd., All right res erved. WF WF WF WFF F F F7 7 7 7N65S N65S N65S N65S WT-F044-Rev.A1 Nov.2013 650V 650V 650V 650V Super-Junction Super-Junction Super-Junction Super-Junction Power Power Power Power MOSFET MOSFET MOSFET MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Q g =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 650 V ID Continuous Drain Current (Tc=25℃) (Tc=100℃) 7 A 4.4 IDM Drain Current Pulsed 1) 21 A VGS Gate to Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2) 230 mJ IAR Single Pulse Avalanche Current 1) 7 A EAR Repetitive Avalanche Energy 1) 0.5 mJ PD Total Pow er Dissipation(@Tc=25℃) -Derate above 25℃ 31 W 0.25 W/℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ Is Continuous diode forw ard current 7 A Is,pulse Diode pulse current 21 A Notes: 1.Repetitive Rating:Pulse w idth limited by maximum Junction Temperature 2.IAS=2.5,VDD=60V,R G=25Ω ,Starting TJ=25℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RθJC Thermal Resistance , Junction -to -Case - - 4 ℃/W RθJA Thermal Resistance , Junction -to -Ambient - - 80 ℃/W G D S |
유사한 부품 번호 - WFF7N65S |
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유사한 설명 - WFF7N65S |
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