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ES1D 데이터시트(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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ES1D 데이터시트(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Surface Mount Rectifiers ES1A--ES1J Document Number: SMA103AA www.gmicroelec.com 1 FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol ,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case: DO-214AC(SMA) molded plastic Terminals: Solder able per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.002 ounces,0.064 grams Mounting position: Any Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1H ES1J UNITS Device marking ES1A ES1B ES1C ES1D ES1E ES1G ES1H ES1J Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current @TA=75℃ IF(AV) 1.0 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125℃ IFSM 30 A Thermal Characteristics Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1H ES1J UNITS Typical junction capacitance (Note2) CJ 19 p F Typical thermal resistance RθJA 50 ℃ /W Operating junction temperature range TJ - 55 ---- + 150 ℃ Storage temperature range TSTG - 55 ---- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1H ES1J UNITS Maximum instantaneous forward voltage at1.0 A VF 0.98 1.25 1.70 V Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=125℃ IR 5.0 200 μA Maximum Reverse Recovery Time (Note1) trr 35 ns NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A 2. Measured at 1.0MHZ and applied reverse voltage of 4.0VDC Pb Lead-free |
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