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ESDALC6V1P6 데이터시트(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1P6 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 10 page ESDALC6V1P6 2/10 ® ABSOLUTE RATING (Tamb = 25°C) THERMAL RESISTANCES ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter Value Unit VPP ESD discharge IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ± 15 ± 8 kV PPP Peak pulse power (8/20µs) (see note 1) Tj initial = Tamb 30 W Tj Junction temperature 125 °C Tstg Storage temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s at 5mm for case 260 °C Top Operating temperature range -40 to +125 °C Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit. Symbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 220 °C/W Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Rd Dynamic resistance Part Number VBR @ IR IRM @ VRM Rd αTC min. max. max. typ. max. typ. @ 0V VV mA µA V Ω 10-4/°C pF ESDALC6V1P6 6.1 7.2 1 0.5 3 1.5 4.5 12 V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd |
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