SD101AW-G, SD101BW-G, SD101CW-G

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 25-Feb-13

1

Document Number: 85158

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Schottky Diodes

MECHANICAL DATA

Case: SOD-123

Weight: approx. 9.4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATRUES

• For general purpose applications

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications

• The SD101 series is a metal-on-silicon Schottky

barrier device which is protected by a PN junction

guardring

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: For definitions of compliance

Note

Note

PARTS TABLE

PART

ORDERING CODE

INTERNAL

CONSTRUCTION

TYPE MARKING

REMARKS

SD101AW-G

SD101AW-G3-08 or SD101AW-G3-18

Single diode

SK

Tape and reel

SD101BW-G

SD101BW-G3-08 or SD101BW-G3-18

Single diode

SL

SD101CW-G

SD101CW-G3-08 or SD101CW-G3-18

Single diode

SM

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

Repetitive peak reverse voltage

SD101AW-G

60

V

SD101BW-G

50

V

SD101CW-G

40

V

400

mW

Forward continuous current

30

mA

Maximum single cycle surge

10 μs square wave

2A

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

300

K/W

125

°C

Storage temperature range

- 65 to + 150

°C

Operating ttemperature range

- 55 to + 125

°C