VS-80EBU02HF4

www.vishay.com

Vishay Semiconductors

Revision: 15-Mar-13

1

Document Number: 93996

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

FEATURES

• Ultrafast recovery time

• 175 °C max. operating junction temperature

• Screw mounting only

• AEC-Q101 qualified

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in

high frequency power conditioning systems.

The softness of the recovery eliminates the need for a

snubber in most applications. These devices are ideally

suited for HF welding, power converters and other

applications where switching losses are not significant

portion of the total losses.

PRODUCT SUMMARY

Package

80 A

200 V

1.10 V

See recovery table

175 °C

Diode variation

Single die

Cathode

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Cathode to anode voltage

200

V

Continuous forward current

80

A

Single pulse forward current

800

Maximum repetitive forward current

Square wave, 20 kHz

160

Operating junction and

storage temperatures

- 55 to 175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

200

-

-

V

Forward voltage

-

0.94

1.10

-

0.77

0.88

Reverse leakage current

-

-

50

μA

-

-

2

mA

Junction capacitance

-

89

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

3.5

-

nH