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1 / 5 page VSSAF3N50 www.vishay.com Vishay General Semiconductor Revision: 24-Jul-14 1 Document Number: 87720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Trench MOS Barrier Schottky Rectifier TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-221AC (SlimSMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Note (1) Mounted on 5 mm x 5 mm copper pad areas, 2 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V IFSM 80 A VF at IF = 3.0 A 0.40 V TJ max. 150 °C Package DO-221AC (SlimSMA) Diode variation Single die DO-221AC TMBS ® SlimSMATM Top View Bottom View MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSSAF3N50 UNIT Device marking code 3N5 Maximum repetitive peak reverse voltage VRRM 50 V Maximum DC forward current (fig. 1) IF (1) 3.0 A IF (2) 2.7 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A Maximum DC reserve voltage VDC 35 V Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
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