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VS-STPS1045B-M3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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VS-STPS1045B-M3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93327 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 03-Nov-10 VS-STPS1045B-M3 Vishay Semiconductors Schottky Rectifier, 10 A Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR 140 150 160 170 180 IF(AV) - Average Forward Current (A) 4 26 8 10 12 14 16 0 DC See note (1) Square wave (D = 0.50) 80 % rated V R applied 0 2 6 12 14 10 8 4 16 IF(AV) - Average Forward Current (A) 4 2 68 16 10 12 14 0 DC RMS limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 100 1000 tp - Square Wave Pulse Duration (µs) 100 1000 10 000 10 At any rated load condition and with rated V RRM applied following surge |
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