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TLP2530 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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TLP2530 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TLP2530,TLP2531 2002-09-25 2 Maximum Ratings Characteristic Symbol Rating Unit Forward current(each channel) (Note 1) IF 25 mA Pulse forward current (Each Channel) (Note 2) IFP 50 mA Total pulse forward current (each channel) (Note 3) IFPT 1 A Reverse voltage(each channel) VR 5 V Diode power dissipation (each channel) (Note 4) PD 45 mW Output current(each channel) IO 8 mA Peak output current (each channel) IOP 16 mA Supply voltage VCC -0.5~15 V Output voltage(each channel) VO -0.5~15 V Output power dissipation (each channel) (Note 5) PO 35 mW Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead solder temperature(10s)** Tsol 260 °C Isolation voltage (AC, 1min., R.H.≤ 60%) (Note 7) BVS 2500 Vrms (Note 1) Derate 0.8mA above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width 1µs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 1mW / °C above 70°C. **2mm below seating plane. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC 0 ¾ 12 V Forward current, each channel IF ¾ 16 25 mA Operating temperature Topr -25 ¾ 85 °C |
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