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SI1062X 데이터시트(PDF) 1 Page - Vishay Siliconix |
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1 / 8 page Vishay Siliconix Si1062X Document Number: 62661 S12-2732-Rev. B, 12-Nov-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com New Product N-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Gate-Source ESD Protected: 1000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 20 0.420 at VGS = 4.5 V 0.5 1 nC 0.492 at VGS = 2.5 V 0.2 0.597 at VGS = 1.8 V 0.2 0.762 at VGS = 1.5 V 0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 0.53a, b A TA = 70 °C 0.43a, b Pulsed Drain Current (t = 300 µs) IDM 2 Continuous Source-Drain Diode Current TA = 25 °C IS 0.18a, b A Maximum Power Dissipationa TA = 25 °C PD 0.22a, b W TA = 70 °C 0.14a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb t 5 s RthJA 440 530 °C/W Steady State 540 650 Ordering Information: Si1062X-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code J XX Lot Traceability and Date Code Part # Code SC-89 (3-LEADS) Top View 2 1 S D G 3 |
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